Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.
|Author||: Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon|
|Publisher||: Springer Nature|
|Release Date||: 2020-03-23|
|ISBN 10||: 9811512124|
|Pages||: 425 pages|
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field
|Author||: Ekaterina Yurchuk|
|Publisher||: Logos Verlag Berlin GmbH|
|Release Date||: 2015-06-30|
|ISBN 10||: 3832540032|
|Pages||: 238 pages|
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable crystals and other inorganic materials, as well as organic ferroelectrics (polymers, liquid crystals, and composites). Basic concepts, principles and methods for the physical property characteristics of ferroelectric materials are introduced in the first two chapters for those readers new to the subject of ferroelectricity. Not only professional researchers and engineers but also students and other readers who have limited physical knowledge and an interest in ferroelectrics, will welcome this book.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Presents state-of-the-art knowledge?from basic insights to applications?on ferroic materials-based devices This book covers the fundamental physics, fabrication methods, and applications of ferroic materials and covers bulk, thin films, and nanomaterials. It provides a thorough overview of smart materials and systems involving the interplays among the mechanical strain, electrical polarization, magnetization, as well as heat and light. Materials presented include ferroelectric, multiferroic, piezoelectric, electrostrictive, magnetostrictive, and shape memory materials as well as their composites. The book also introduces various sensor and transducer applications, such as ultrasonic transducers, surface acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. Ferroic Materials for Smart Systems: Fabrication, Devices and Applications introduces advanced measurement and testing techniques in ferroelectrics, including FeRAM and ferroelectric tunnelling based resistive switching. It also looks at ferroelectricity in emerging materials, such as 2D materials and high-k gate dielectric material HfO2. Engineering considerations for device design and fabrication are examined, as well as applications for magnetostrictive devices. Multiferroics of materials possessing both ferromagnetic and ferroelectric orders is covered, along with ferroelastic materials represented by shape memory alloy and magnetic shape memory alloys. -Brings together physics, fabrication, and applications of ferroic materials in a coherent manner -Discusses recent advances in ferroic materials technology and applications -Covers dielectric, ferroelectric, pyroelectric and piezoelectric materials -Introduces electrostrictive materials and magnetostrictive materials -Examines shape memory alloys and magneto-shape-memory alloys -Introduces devices based on the integration of ferroelectric and ferromagnetic materials such as multiferroic memory device and ME coupling device for sensor applications Ferroic Materials for Smart Systems: Fabrication, Devices and Applications will appeal to a wide variety of researchers and developers in physics, materials science and engineering.
The DRC brings together leading scientists, researchers, and students to share their latest discoveries in device science, technology and modeling Areas of focus include Biological Devices Emerging Electronic Device Materials (graphene, MoS2, etc ) Energy Scavenging Devices Magnetic Devices Memory Devices Modeling and Simulation of Devices Nanoscale Devices Optoelectronic and Optical DevicesOrganic and Molecular Devices Power Devices Quantum Devices Silicon, III V, and 2D Electronic Devices Spin based Devices Thin Film and Amorphous Devices Terahertz Devices Wide bandgap Devices
This book presents selected peer-reviewed contributions from the 2019 International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2019 (Hanoi, Vietnam, 7–10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical–mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.
Fuel cell technology is quite promising for conversion of chemical energy of hydrocarbon fuels into electricity without forming air pollutants. There are several types of fuel cells: polymer electrolyte fuel cell (PEFC), phosphoric acid fuel cell (PAFC), molten carbonate fuel cell (MCFC), solid oxide fuel cell (SOFC), and alkaline fuel cell (AFC). Among these, SOFCs are the most efficient and have various advantages such as flexibility in fuel, high reliability, simple balance of plant (BOP), and a long history. Therefore, SOFC technology is attracting much attention as a power plant and is now close to marketing as a combined heat and power generation system. From the beginning of SOFC development, many perovskite oxides have been used for SOFC components; for example, LaMnO -based oxide for the cathode and 3 LaCrO for the interconnect are the most well known materials for SOFCs. The 3 current SOFCs operate at temperatures higher than 1073 K. However, lowering the operating temperature of SOFCs is an important goal for further SOFC development. Reliability, durability, and stability of the SOFCs could be greatly improved by decreasing their operating temperature. In addition, a lower operating temperature is also beneficial for shortening the startup time and decreasing energy loss from heat radiation. For this purpose, faster oxide ion conductors are required to replace the conventional Y O -stabilized ZrO 2 3 2 electrolyte. A new class of electrolytes such as LaGaO is considered to be 3 highly useful for intermediate-temperature SOFCs.
An informal and highly accessible writing style, a simple treatment of mathematics, and clear guide to applications, have made this book a classic text in electrical and electronic engineering. Students will find it both readable and comprehensive. The fundamental ideas relevant to the understanding of the electrical properties of materials are emphasized; in addition, topics are selected in order to explain the operation of devices having applications (or possible future applications) in engineering. The mathematics, kept deliberately to a minimum, is well within the grasp of a second-year student. This is achieved by choosing the simplest model that can display the essential properties of a phenomenom, and then examining the difference between the ideal and the actual behaviour. The whole text is designed as an undergraduate course. However most individual sections are self contained and can be used as background reading in graduate courses, and for interested persons who want to explore advances in microelectronics, lasers, nanotechnology and several other topics that impinge on modern life.
Electroceramics, Materials, Properties, Applications, Second Edition provides a comprehensive treatment of the many aspects of ceramics and their electrical applications. The fundamentals of how electroceramics function are carefully introduced with their properties and applications also considered. Starting from elementary principles, the physical, chemical and mathematical background of the subject are discussed and wherever appropriate, a strong emphasis is placed on the relationship between microstructire and properties. The Second Edition has been fully revised and updated, building on the foundation of the earlier book to provide a concise text for all those working in the growing field of electroceramics. fully revised and updated to include the latest technological changes and developments in the field includes end of chapter problems and an extensive bibliography an Invaluable text for all Materials Science students. a useful reference for physicists, chemists and engineers involved in the area of electroceramics.
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
|Author||: Filippo Giannazzo,Samuel Lara Avila,Jens Eriksson,Sushant Sonde|
|Release Date||: 2019-02-13|
|ISBN 10||: 3038976067|
|Pages||: 264 pages|
This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
A comprehensive reference on the properties, selection, processing, and applications of the most widely used nonmetallic engineering materials. Section 1, General Information and Data, contains information applicable both to polymers and to ceramics and glasses. It includes an illustrated glossary, a collection of engineering tables and data, and a guide to materials selection. Sections 2 through 7 focus on polymeric materials--plastics, elastomers, polymer-matrix composites, adhesives, and sealants--with the information largely updated and expanded from the first three volumes of the Engineered Materials Handbook. Ceramics and glasses are covered in Sections 8 through 12, also with updated and expanded information. Annotation copyright by Book News, Inc., Portland, OR
|Author||: Theodor Schneller,Rainer Waser,Marija Kosec,David Payne|
|Publisher||: Springer Science & Business Media|
|Release Date||: 2014-01-24|
|ISBN 10||: 3211993118|
|Pages||: 796 pages|
This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.