|Author||: Yoshio Nishi|
|Release Date||: 2014-06-24|
|ISBN 10||: 0857098098|
|Pages||: 532 pages|
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.
|Author||: Hsu Charles Ching-hsiang,Lin Yuan-tai|
|Publisher||: World Scientific|
|Release Date||: 2014-03-18|
|ISBN 10||: 9814460923|
|Pages||: 316 pages|
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
|Author||: Su-Ting Han,Ye Zhou|
|Publisher||: Woodhead Publishing|
|Release Date||: 2020-05-26|
|ISBN 10||: 0128226064|
|Pages||: 352 pages|
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Information technology is essential to our daily life, and the limitations of silicone based memory systems mean a growing amount of research is focussed on finding an inexpensive alternative to meet our needs and allow the continued development of the industry. Inorganic silicone based technology is increasingly costly and complex and is physically limited by the problems of scaling down. Organic electrical memory devices are comparatively low cost, offer flexibility in terms of chemical structure, are compatible with flexible substrates and allow easy processing. For these reasons polymeric memory nanoscale materials are considered by many to be a potential substitute for conventional semiconductor memory systems. This edited book focusses solely on organic memory devices, providing a full background and overview of the area before bringing the reader up to date with the current and ongoing research in this area. The broad appeal of this book will be applicable to a wide range of researchers and those working in industry, in particular those working in materials, electrical and chemical engineering.
|Author||: Suparna Bhattacharya,Kanchi Gopinath,Doug Voigt|
|Publisher||: CRC Press|
|Release Date||: 2020-02-21|
|ISBN 10||: 1351682334|
|Pages||: 386 pages|
Efficiency is a crucial concern across computing systems, from the edge to the cloud. Paradoxically, even as the latencies of bottleneck components such as storage and networks have dropped by up to four orders of magnitude, software path lengths have progressively increased due to overhead from the very frameworks that have revolutionized the pace of information technology. Such overhead can be severe enough to overshadow the benefits from switching to new technologies like persistent memory and low latency interconnects. Resource Proportional Software Design for Emerging Systems introduces resource proportional design (RPD) as a principled approach to software component and system development that counters the overhead of deeply layered code without removing flexibility or ease of development. RPD makes resource consumption proportional to situational utility by adapting to diverse emerging needs and technology systems evolution. Highlights: Analysis of run-time bloat in deep software stacks, an under-explored source of power-performance wastage in IT systems Qualitative and quantitative treatment of key dimensions of resource proportionality Code features: Unify and broaden supported but optional features without losing efficiency Technology and systems evolution: Design software to adapt with changing trade-offs as technology evolves Data processing: Design systems to predict which subsets of data processed by an (analytics or ML) application are likely to be useful System wide trade-offs: Address interacting local and global considerations throughout software stacks and hardware including cross-layer co-design involving code, data and systems dimensions, and non-functional requirements such as security and fault tolerance Written from a systems perspective to explore RPD principles, best practices, models and tools in the context of emerging technologies and applications This book is primarily geared towards practitioners with some advanced topics for researchers. The principles shared in the book are expected to be useful for programmers, engineers and researchers interested in ensuring software and systems are optimized for existing and next generation technologies. The authors are from both industry (Bhattacharya and Voigt) and academic (Gopinath) backgrounds.
Memory Mass Storage describes the fundamental storage technologies, like Semiconductor, Magnetic, Optical and Uncommon, detailing the main technical characteristics of the storage devices. It deals not only with semiconductor and hard disk memory, but also with different ways to manufacture and assembly them, and with their application to meet market requirements. It also provides an introduction to the epistemological issues arising in defining the process of remembering, as well as an overview on human memory, and an interesting excursus about biological memories and their organization, to better understand how the best memory we have, our brain, is able to imagine and design memory.
Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs. Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges. Topics Include: DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research Various types of leakages and power consumption reduction methods in active and sleep mode Various types of SAs and yield enhancement techniques employing ECC and redundancy A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
|Author||: Arup Bhattacharyya|
|Publisher||: CRC Press|
|Release Date||: 2017-07-06|
|ISBN 10||: 1351798316|
|Pages||: 512 pages|
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Advances in Computers, Volume 118, the latest volume in this innovative series published since 1960, presents detailed coverage of new advancements in computer hardware, software, theory, design and applications. Chapters in this updated release include Introduction to non-volatile memory technologies, The emerging phase-change memory, Phase-change memory architectures, Inter-line level schemes for handling hard errors in PCMs, Handling hard errors in PCMs by using intra-line level schemes, and Addressing issues with MLC Phase-change Memory. Gives a comprehensive overlook of new memory technologies, including PCM Provides reliability features with an in-depth discussion of physical mechanisms that are currently limiting PCM capabilities Covers the work of well-known authors and researchers in the field Includes volumes that are devoted to single themes or subfields of computer science